The course will be held by prof. Claudio Fiegna and prof. Susanna Reggiani and is part of the training provided for ET-IT PhD Students (a.y.2023/2024)
Date:
Event location: Room 4.2 & 2.7 - Viale Risorgimento, 2 - Bologna & Room 2.11 - UOS - Via dell’Università, 50 - Cesena
Type: ET-IT Course
ABSTRACT
The short course will deal with semiconductor transistors for power circuits.
The silicon power MOSFET will be introduced and its main characteristics and figures of merit will be described. The relevance of technological options in terms of device geometry and doping concentrations will be discussed with specific emphasis on their impact on the trade-off between maximum blocking voltage and parasitic resistances.
The advantages of new semiconductor materials featuring large bandgap energy will be introduced. The characterization and modeling of power transistors will be also addressed with special focus on reliability issues related to hot-carrier stress degradation. The most adopted design tool-kit will be presented along with some relevant investigations. Wide-bandgap semiconductor devices will be compared to silicon-based ones and their specific reliability issues will be discussed.
SCHEDULE
This course is part of the training provided for ET-IT PhD Students in the academic year 2023/2024.
For further information about course attendance and the validation of credits (Cycle 37, 38 and 39) and attendance hours (Cycle 38 and 39), we strongly suggest that you visit the specific webpage.