The seminar will be held by dr. Andrea Natale Tallarico, prof. Alberto Santarelli & prof. Corrado Florian and is part of the training provided for ET-IT PhD Students (a.y.2023/2024)
Date:
Event location: Room 2 - Viale Risorgimento, 2 - Bologna & Room 2.13 - UOS - Via dell’Università, 50 - Cesena
Type: Seminar
ABSTRACT
1. 25.06.24 - dr. Andrea Natale Tallarico
The first part of this lecture (25/06) will explore Gallium Nitride-based High Electron Mobility Transistors (HEMTs), highlighting their operating principles and main applications. The discussion will cover the advantages of GaN HEMTs over traditional silicon transistors, various architectures, their electrical and thermal characteristics, and their applications in power electronics.
2. 26.06.24, 9-11am - prof. Alberto Santarelli
After an introduction to GaN HEMTs for high-frequency applications, this lecture will focus on issues related to measurement-based modelling of GaN HEMTs for microwave circuit design. Topics covered will include model requirements and types, thermal and charge trapping empirical modeling, quasi- and nonquasi-static GaN HEMT RF modeling, experimental device characterization techniques with low and high frequency excitations.
3. 26.06.24, 11am-1pm - prof. Corrado Florian
This lecture will briefly introduce and describe the main characteristics, performance indexes and working principle of power electronic circuits for industrial and automotive applications.
SCHEDULE
This seminar is part of the training provided for ET-IT PhD Students in the academic year 2023/2024.
For further information about attendance and the validation of credits (Cycle 37, 38 and 39) and attendance hours (Cycle 38 and 39), we strongly suggest that you visit the specific webpage.
N.B. Seminars are independent activities. This means that they have their own final assessment, and the participation in terms of hours is counted separately from the module to which they refer.
Senior assistant professor (fixed-term)