The seminar is held by Dr. Martino Lorenzini, Director of Device Technology at Gallium Semiconductor, Nijmegen (Netherlands)
Date: 27 NOVEMBER 2023 from 9:00 to 10:00
Event location: Room 0.5 - Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi" DEI - Viale Risorgimento, 2 - Bologna
Type: Seminar
This is an external activity approved by the PhD Board, which implies that:
No credit request form or Supervisor's approval is required. Credits will be recorded automatically.
ABSTRACT
While the amount of silicon transistors shipped these days still largely outnumbers the shipment of any III-V component, Gallium Nitride (GaN)-based devices are gaining traction in a number of high-power and high-frequency application domains due to the unique properties of such wide-band gap material. Presently, GaN transistors support several commercial applications, and in particular the GaN radio-frequency (RF) market is expected to raise to 2.5B$ in 2027 from 680M$ in 2018. The seminar will start with an introduction to the fundamental properties of the GaN material and of the high-electron-mobility transistor (HEMT) based on such material. Next, it will cover GaN HEMT fabrication, performance, reliability, and market segments, with an emphasis on RF applications. Finally, a look at the main market players along the value chain will be provided as well.
BIO
Martino Lorenzini received the Laurea (cum laude) and Ph.D. degrees in electronic engineering from the University of Bologna, Bologna, Italy, in 1993 and 1997, respectively. In 2001, he received a M. Sc. degree in physics from the Katholieke Universiteit Leuven, Leuven, Belgium. From 1994 to 1997, he was with the Department of Electronics, Computer Science and Systems (DEIS) of the University of Bologna, where he carried out his research activity in the field of semiconductor-device modeling and simulation. In 1998, he joined the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium, where he worked on several research topics in the field of non-volatile memory devices. In 2005, he moved to NXP Semiconductors, formerly Philips Semiconductors, initially involved in the development of RF power LDMOS devices. Since 2008, he has been working on the development of AlGaN/GaN HEMTs for RF and microwave applications in cooperation with external foundries and research partners. Currently, he is with Gallium Semiconductor Netherlands. He has authored or coauthored more than 40 journal and conference papers. His research interests include the physics and modeling of semiconductor devices, with present emphasis on high-power and high-frequency HEMTs.