The course will be held by prof.ssa Susanna Reggiani and is part of the training provided for ET-IT PhD Students (a.y.2025/2026).
Date:
Event location: TBD - Bologna - In presence and online event
Type: ET-IT Course
ABSTRACT
The short course will deal with semiconductor transistors for power applications. A brief introduction to the integrated power MOSFETs in silicon and future monolithically-integrated GaN/AlGaN HEMTs will be given to the purpose of highlighting the most relevant figures of merits in terms of performance and reliability.
The technology CAD adopted by the Semiconductor Companies and Research Centers as a specific design tool-kit will be presented along with some relevant investigations carried out on the key physical mechanisms. Wide-bandgap semiconductor devices will be compared to silicon-based ones and their specific reliability issues will be discussed.
This course is part of the ET-IT training activities for the a.y. 2025/2026.
Further information about the schedule, the minimum attendance rate and the exam format is outlined HERE and detailed by the instructor during the course.
This form is meant to help instructors estimate the number of participants and organize the activity accordingly. It is not binding, but we kindly ask you to complete it responsibly.